SURFACE RELAXATION OF STRAINED HETEROSTRUCTURES REVEALED BY BRAGG LINE SPLITTING IN LACBED PATTERNS

被引：26

作者：

CHOU, CT ^{[1
]}

ANDERSON, SC ^{[1
]}

COCKAYNE, DJH ^{[1
]}

SIKORSKI, AZ ^{[1
]}

VAUGHAN, MR ^{[1
]}

机构：

[1] CSIRO,DIV RADIOPHYS,EPPING,NSW 2121,AUSTRALIA

来源：

ULTRAMICROSCOPY | 1994年 / 55卷 / 03期

基金：

澳大利亚研究理事会;

关键词：

D O I：

10.1016/0304-3991(94)90070-1

中图分类号：

TH742 [显微镜];

学科分类号：

摘要：

Bragg line splitting near the shadow image of a thin strained InGaAs layer, buried in GaAs and without strain relief by misfit dislocations, was found in large angle convergent beam electron diffraction (LACBED) patterns of cross-section specimens. The surface relaxation of the built-in strain and the Bragg line intensities were calculated. A qualitative agreement between the experimental Bragg line splitting and the theoretical calculations is demonstrated. Closer matching was achieved using a ''line-force'' model of the surface relaxation, whereas a Fourier transform solution showed significant underestimation of the Bragg line splitting. The possibility of characterising the built-in strain in thin strained layers, by measuring this Bragg line splitting in LACBED patterns, has been explored.

引用

页码：334 / 347

页数：14

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