IMPACT IONIZATION OF ELECTRONS IN SILICON (STEADY-STATE)

被引：140

作者：

TANG, JY

HESS, K

机构：

[1] UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801

[2] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

来源：

JOURNAL OF APPLIED PHYSICS | 1983年 / 54卷 / 09期

关键词：

D O I：

10.1063/1.332737

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5139 / 5144

页数：6

共 14 条

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[7]

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[10] PROBLEMS RELATED TO P-N JUNCTIONS IN SILICON [J].

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