IMPACT IONIZATION OF ELECTRONS IN SILICON (STEADY-STATE)

被引:140
作者
TANG, JY
HESS, K
机构
[1] UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
[2] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801
关键词
D O I
10.1063/1.332737
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:5139 / 5144
页数:6
相关论文
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