CHARACTERISTICS OF SCHOTTKY DIODES WITH MICROCLUSTER INTERFACE

被引:36
作者
SCHNEIDER, MV
CHO, AY
KOLLBERG, E
ZIRATH, H
机构
[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974
[2] CHALMERS UNIV TECHNOL,S-41296 GOTHENBURG,SWEDEN
关键词
D O I
10.1063/1.94418
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:558 / 560
页数:3
相关论文
共 8 条
[1]  
[Anonymous], 1939, WISS VEROFF SIEMENS
[2]   THE EFFECTS OF SURFACE TREATMENTS ON THE PT/N-GAAS SCHOTTKY INTERFACE [J].
AYDINLI, A ;
MATTAUCH, RJ .
SOLID-STATE ELECTRONICS, 1982, 25 (07) :551-558
[3]  
Cho A. Y., 1975, Progress in Solid State Chemistry, V10, P157, DOI 10.1016/0079-6786(75)90005-9
[4]   SINGLE-CRYSTAL METAL-SEMICONDUCTOR MICROJUNCTIONS PREPARED BY MOLECULAR-BEAM EPITAXY [J].
CHO, AY ;
KOLLBERG, E ;
ZIRATH, H ;
SNELL, WW ;
SCHNEIDER, MV .
ELECTRONICS LETTERS, 1982, 18 (10) :424-425
[5]   SCHOTTKY BARRIERS - AN EFFECTIVE WORK FUNCTION MODEL [J].
FREEOUF, JL ;
WOODALL, JM .
APPLIED PHYSICS LETTERS, 1981, 39 (09) :727-729
[6]   PARALLEL SILICIDE CONTACTS [J].
OHDOMARI, I ;
TU, KN .
JOURNAL OF APPLIED PHYSICS, 1980, 51 (07) :3735-3739
[7]  
Sze S. M., 1981, PHYSICS SEMICONDUCTO, P245
[8]   ARE THEY REALLY SCHOTTKY BARRIERS AFTER ALL [J].
WOODALL, JM ;
FREEOUF, JL .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (02) :574-576