LOW-CARBON CONTAMINATION OF EPITAXIAL GERMANIUM FILMS PRODUCED BY PYROLYSIS OF ALKYL GERMANIUM COMPOUNDS

被引：13

作者：

AVIGAL, Y ^{[1
]}

ITZHAK, D ^{[1
]}

SCHIEBER, M ^{[1
]}

机构：

[1] HEBREW UNIV,SCH APPL SCI & TECHNOL,DEPT MAT SCI,JERUSALEM,ISRAEL

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1975年 / 122卷 / 09期

关键词：

D O I：

10.1149/1.2134430

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1226 / 1229

页数：4

共 21 条

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AVIGAL, Y ;

SCHIEBER, M ;

LEVIN, R .

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[3] NEW METHOD FOR CHEMICAL VAPOR-DEPOSITION OF SILICON DIOXIDE [J].

AVIGAL, Y ;

BEINGLAS.I ;

SCHIEBER, M .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (08) :1103-1107

[4] SILICON CARBIDE CONTAMINATION OF EPITAXIAL SILICON GROWN BY PYROLYSIS OF TETRAMETHYL SILANE [J].

AVIGAL, YY ;

SCHIEBER, M .

JOURNAL OF CRYSTAL GROWTH, 1971, 9 (01) :127-&

[5]

BECKER, P NAT ELECTRONICS C, V8, P506

[6]

BROOKS MS, 1962, ULTRAPURIFICATION SE

[7]

CAVE EF, 1963, RCA REV, V24, P523

[8] VAPOR PHASE CRYSTAL GROWTH OF GERMANIUM FROM THERMALLY DECOMPOSED GERMANE [J].

DAVIS, M ;

LEVER, RF .

JOURNAL OF APPLIED PHYSICS, 1956, 27 (07) :835-836

[9]

DUMIN DJ, 1967, J ELCHEM SO, V114, P752

[10]

FERSHAM PJ, 1955, J PHYS CHEM, V59, P806

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