NEW METHOD FOR CHEMICAL VAPOR-DEPOSITION OF SILICON DIOXIDE

被引：9

作者：

AVIGAL, Y ^{[1
]}

BEINGLAS.I ^{[1
]}

SCHIEBER, M ^{[1
]}

机构：

[1] HEBREW UNIV, SCH APPL SCI & TECHNOL, JERUSALEM, ISRAEL

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1974年 / 121卷 / 08期

关键词：

D O I：

10.1149/1.2401985

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1103 / 1107

页数：5

共 11 条

[1] PROPERTIES OF SILICON DIOXIDE FILMS ON SILICON AS DIFFUSION MASKS FOR BORON [J].

ANAND, KV ;

MCKELL, HD ;

NORTHROP, DC .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1971, 4 (11) :1722-&

[2] DETERMINATION OF PROPERTIES OF FILMS ON SILICON BY METHOD OF ELLIPSOMETRY [J].

ARCHER, RJ .

JOURNAL OF THE OPTICAL SOCIETY OF AMERICA, 1962, 52 (09) :970-&

[3]

BARRY ML, 1970, 2 INT C CHEM VAP DEP, P595

[4] SURFACE PROTECTION AND SELECTIVE MASKING DURING DIFFUSION IN SILICON [J].

FROSCH, CJ ;

DERICK, L .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1957, 104 (09) :547-552

[5] DIFFUSION OF DONOR AND ACCEPTOR ELEMENTS IN SILICON [J].

FULLER, CS ;

DITZENBERGER, JA .

JOURNAL OF APPLIED PHYSICS, 1956, 27 (05) :544-553

[6]

GOLDSMITH N, 1967, RCA REV, V28, P344

[7]

GOLDSMITH N, 1967, RCA REV, V28, P153

[8] A METHOD FOR THE DEPOSITION OF SIO AT LOW TEMPERATURES [J].

KLERER, J .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1961, 108 (11) :1070-1071

[9] STRUCTURAL EVALUATION OF SILICON OXIDE FILMS [J].

PLISKIN, WA ;

LEHMAN, HS .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (10) :1013-&

[10] CHARACTERISTICS OF METAL-OXIDE-SEMICONDUCTOR TRANSISTORS [J].

SAH, CT .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1964, ED11 (07) :324-+

← 1 2 →