SILICON CARBIDE CONTAMINATION OF EPITAXIAL SILICON GROWN BY PYROLYSIS OF TETRAMETHYL SILANE

被引：19

作者：

AVIGAL, YY

SCHIEBER, M

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1971年 / 9卷 / 01期

关键词：

D O I：

10.1016/0022-0248(71)90219-3

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

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页码：127 / &

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