ONO INTER-POLY DIELECTRIC SCALING FOR NONVOLATILE MEMORY APPLICATIONS

被引：44

作者：

MORI, S ^{[1
]}

SAKAGAMI, E ^{[1
]}

ARAKI, H ^{[1
]}

KANEKO, Y ^{[1
]}

NARITA, K ^{[1
]}

OHSHIMA, Y ^{[1
]}

ARAI, N ^{[1
]}

YOSHIKAWA, K ^{[1
]}

机构：

[1] TOSHIBA MICROELECTR CORP,SAIWAI KU,KAWASAKI 210,JAPAN

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1991年 / 38卷 / 02期

关键词：

D O I：

10.1109/16.69921

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The ONO (Oxide/Nitride/Oxide) inter-poly dielectric thickness scaling effect on E-I (electric field-leakage current) characteristics and charge retention characteristics in nonvolatile memories were investigated. Surface top-oxide thickness strongly affects the charge leakage and retention characteristics. Thicker than 3 nm top oxide can block hole injection from the anode. Thick top oxide can reduce leakage current in both high and low electric field regions. Moreover, it can improve charge retention characteristics in nonvolatile memory cells. Therefore, a certain amount of top oxide is required to preserve good charge retention characteristics. SiN thickness scaling leads to an improvement in charge retention characteristics. Bottom oxide has an important role in suppressing electron leakage in a low electric field region. A degraded quality thin bottom oxide leads to charge retention capability degradation. Therefore, bottom-oxide quality and thickness control is one of the most important subjects for ONO thickness scaling.

引用

页码：386 / 391

页数：6