EASILY MANUFACTURED HIGH-SPEED BACK-ILLUMINATED GAINAS/INP P-I-N PHOTODIODE

被引：13

作者：

MAKIUCHI, M

HAMAGUCHI, H

MIKAWA, T

WADA, O

机构：

[1] Fujitsu Laboratories Ltd., Atsugi 243-01

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1991年 / 3卷 / 06期

关键词：

D O I：

10.1109/68.91024

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A back-illuminated planar GaInAs/InP p-i-n photodiode has been fabricated with a simple fabrication process to obtain a high-speed detector. The photodiode has a capacitance as low as 54 fF, a dark current of about 3 pA, and a quantum efficiency of 74% at a 1.55-mu-m wavelength. A cutoff frequency of 31 GHz was obtained when the photocurrent was about 500-mu-A and the bias voltage was -10 V.

引用

页码：530 / 531

页数：2

共 4 条

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[3]

SUSSMANN RS, 1985, ELECTRON LETT, V21, P593, DOI 10.1049/el:19850419

[4] HIGH-RELIABILITY FLIP-CHIP GAINAS/INP PIN PHOTODIODE [J].

WADA, O ;

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HAMAGUCHI, H ;

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MIKAWA, T .

ELECTRONICS LETTERS, 1990, 26 (18) :1484-1486

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