HIGH-RELIABILITY FLIP-CHIP GAINAS/INP PIN PHOTODIODE

被引：9

作者：

WADA, O

KUMAI, T

HAMAGUCHI, H

MAKIUCHI, M

KURAMATA, A

MIKAWA, T

机构：

[1] Fujitsu Laboratories Ltd., Atsugi, 10-1, Morinosato-Wakamiya

来源：

ELECTRONICS LETTERS | 1990年 / 26卷 / 18期

关键词：

Photodiodes; Semiconductor devices and materials;

D O I：

10.1049/el:19900953

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Lensed, small-junction, flip-chip GalnAs/lnP pin photodiodes were fabricated by introducing planar junction and reliable metallisation structures. Low dark current (<100pA), high quantum efficiency (80%) with large fibre alignment tolerance (42 μm) and also large bandwidth (21 GHz) characteristics were achieved. Aging test carried out at 180°C for 3000 h confirmed their high reliability. © 1990, The Institution of Electrical Engineers. All rights reserved.

引用

页码：1484 / 1486

页数：3

共 10 条

[1] IMPROVED VERY-HIGH-SPEED PACKAGED INGAAS PIN PUNCH-THROUGH PHOTODIODE [J].