SMALL-JUNCTION-AREA GAINAS/INP PIN PHOTODIODE WITH MONOLITHIC MICROLENS

被引：20

作者：

MAKIUCHI, M

WADA, O

KUMAI, T

HAMAGUCHI, H

AOKI, O

OIKAWA, Y

机构：

[1] Fujitsu Lab Ltd, Atsugi, Jpn, Fujitsu Lab Ltd, Atsugi, Jpn

来源：

ELECTRONICS LETTERS | 1988年 / 24卷 / 02期

关键词：

D O I：

10.1049/el:19880072

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：109 / 110

页数：2

共 8 条

[1] MILLIMETER-WAVE-GUIDE-MOUNTED INGAAS PHOTODETECTORS [J].

BOWERS, JE ;

BURRUS, CA ;

MITSCHKE, F .

ELECTRONICS LETTERS, 1986, 22 (12) :633-635

[2] PLANAR, EMBEDDED INP/GALNASP-I-N PHOTODIODE WITH VERY HIGH-SPEED RESPONSE CHARACTERISTICS [J].

MIURA, S ;

KUWATSUKA, H ;

MIKAWA, T ;

WADA, O .

APPLIED PHYSICS LETTERS, 1986, 49 (22) :1522-1524

[3] 20 GHZ BANDWIDTH INGAAS PHOTODETECTOR FOR LONG-WAVELENGTH MICROWAVE OPTICAL LINKS [J].

SCHLAFER, J ;

SU, CB ;

POWAZINIK, W ;

LAUER, RB .

ELECTRONICS LETTERS, 1985, 21 (11) :469-471

[4]

SUSSMANN RS, 1985, ELECTRON LETT, V21, P593, DOI 10.1049/el:19850419

[5] VERY HIGH-SPEED OPERATION OF PLANAR INGAAS/INP PHOTODIODE DETECTORS [J].

TEMKIN, H ;

FRAHM, RE ;

OLSSON, NA ;

BURRUS, CA ;

MCCOY, RJ .

ELECTRONICS LETTERS, 1986, 22 (23) :1267-1269

[6] ION-BEAM ETCHING OF INP AND ITS APPLICATION TO THE FABRICATION OF HIGH RADIANCE INGAASP/INP LIGHT-EMITTING-DIODES [J].

WADA, O .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (10) :2373-2380

[7] HIGH RADIANCE INGAASP-INP LENSED LEDS FOR OPTICAL COMMUNICATION-SYSTEMS AT 1.2-1.3 MU-M [J].

WADA, O ;

YAMAKOSHI, S ;

ABE, M ;

NISHITANI, Y ;

SAKURAI, T .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (02) :174-178

[8] OPTIMIZED DESIGN AND FABRICATION OF HIGH-SPEED AND HIGH-RADIANCE INGAASP/INP DH LED IN THE 1-MUM WAVELENGTH REGION [J].

WADA, O ;

HAMAGUCHI, H ;

NISHITANI, Y ;

SAKURAI, T .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (09) :1454-1462

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