ION-BEAM ETCHING OF INP AND ITS APPLICATION TO THE FABRICATION OF HIGH RADIANCE INGAASP/INP LIGHT-EMITTING-DIODES

被引：45

作者：

WADA, O

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1984年 / 131卷 / 10期

关键词：

D O I：

10.1149/1.2115261

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

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页码：2373 / 2380

页数：8

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