VALENCE-BOND THEORY OF OFF-CENTER IMPURITIES IN SILICON - SUBSTITUTIONAL NITROGEN

被引：34

作者：

SCHULTZ, PA

MESSMER, RP

机构：

[1] UNIV PENN,RES STRUCT MATTER LAB,PHILADELPHIA,PA 19104

[2] GE,CTR CORP RES & DEV,SCHENECTADY,NY 12301

来源：

PHYSICAL REVIEW B | 1986年 / 34卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.34.2532

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：2532 / 2553

页数：22

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