SIMPLE AND STABLE SINGLE-ELECTRON LOGIC UTILIZING TUNNEL-JUNCTION LOAD

被引：28

作者：

FUKUI, H

FUJISHIMA, M

HOH, K

机构：

[1] Department of Electronic Engineering, The University of Tokyo, Bunkyo-ku, Tokyo, 113

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1995年 / 34卷 / 2B期

关键词：

SINGLE-ELECTRON TUNNELING; COULOMB BLOCKADE; SINGLE-ELECTRON LOGIC; SET; SEL;

D O I：

10.1143/JJAP.34.1345

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Novel tunnel-junction-load single-electron logic (SEL) was proposed, which is simpler than the complementary SEL and its output is more stable than that of the resistance-load SEL. We analyze the static operation of a tunnel-junction-load inverter by examining the map of stability domains and the dynamic operation using the Monte Carlo simulation. As a result, it ws found that the tunnel-junction SEL has sufficient gain when the temperature is under 4 mK, and operates properly even when two inverters having the same parameters are serially connected.

引用

页码：1345 / 1350

页数：6

共 12 条

[1]

AMMAN M, 1988, J APPL PHYS, V65, P339

[2]

Averin D. V., 1991, MESOSCOPIC PHENOMENA, P173

[3] OBSERVATION OF SINGLE-ELECTRON CHARGING EFFECTS IN SMALL TUNNEL-JUNCTIONS [J].