DANGLING BOND ELECTRONIC STATE ON AN INP(111) SURFACE

被引:15
作者
HOU, XY
DONG, GS
DING, XM
WANG, X
机构
关键词
D O I
10.1016/S0039-6028(87)80339-4
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
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页码:123 / 133
页数:11
相关论文
共 8 条
[1]   SURFACE STATE BAND ON GAAS (110) FACE [J].
GREGORY, PE ;
SPICER, WE ;
CIRACI, S ;
HARRISON, WA .
APPLIED PHYSICS LETTERS, 1974, 25 (09) :511-514
[2]  
GUDAT W, 1978, PHOTOEMISSION ELECTR, P330
[3]   ALUMINUM GROWTH ON (100) INDIUM-PHOSPHIDE [J].
HOUZAY, F ;
MOISON, JM ;
BENSOUSSAN, M .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (02) :756-759
[4]   ATOMIC GEOMETRIES OF COMPOUND SEMICONDUCTOR SURFACES AND INTERFACES [J].
KAHN, A .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (02) :684-691
[5]   SEMICONDUCTOR SURFACE STRUCTURES [J].
Kahn, A. .
SURFACE SCIENCE REPORTS, 1983, 3 (4-5) :193-300
[6]   PRECISE DETERMINATION OF THE VALENCE-BAND EDGE IN X-RAY PHOTOEMISSION SPECTRA - APPLICATION TO MEASUREMENT OF SEMICONDUCTOR INTERFACE POTENTIALS [J].
KRAUT, EA ;
GRANT, RW ;
WALDROP, JR ;
KOWALCZYK, SP .
PHYSICAL REVIEW LETTERS, 1980, 44 (24) :1620-1623
[7]   ANGLE RESOLVED PHOTOELECTRON-SPECTROSCOPY - THE CLEAVED (110) SURFACE OF INDIUM-PHOSPHIDE [J].
MCKINLEY, A ;
SRIVASTAVA, GP ;
WILLIAMS, RH .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1980, 13 (08) :1581-1591
[8]  
Zhang Kaiming, 1983, Communications in Theoretical Physics, V2, P1065