PERIODIC STEP AND TERRACE FORMATION ON SI(100) SURFACE DURING SI EPITAXIAL-GROWTH BY ATMOSPHERIC CHEMICAL VAPOR-DEPOSITION

被引：17

作者：

IZUNOME, K ^{[1
]}

SAITO, Y ^{[1
]}

KUBOTA, H ^{[1
]}

机构：

[1] TOSHIBA CO LTD, SEMICOND GRP, KAWASAKI 210, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1992年 / 31卷 / 9A期

关键词：

D O I：

10.1143/JJAP.31.L1277

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The surface structure of Si epitaxial film growth achieved by atmospheric chemical vapor deposition on Si(100) with a misorientation is studied by angle-resolved light scattering (ARLS) and atomic force microscopy (AFM). The Si epitaxial surface has a periodic structure consisting of terraces and atomic-steps. The terrace length depends on the substrate misorientation. The step height is independent of the substrate misorientation, and is about 0.3 nm, which corresponds to the double-layer step. The periodic structure is formed during the atmospheric growth process.

引用

页码：L1277 / L1279

页数：3

共 12 条

[1]

ABE T, 1991, TECHNICAL ED PROGRAM

[2] FINITE-TEMPERATURE PHASE-DIAGRAM OF VICINAL SI(100) SURFACES [J].