DIBORIDE DIFFUSION-BARRIERS IN SILICON AND GAAS TECHNOLOGY

被引：25

作者：

SHAPPIRIO, JR

FINNEGAN, JJ

LUX, RA

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1986年 / 4卷 / 06期

关键词：

D O I：

10.1116/1.583466

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1409 / 1415

页数：7

共 22 条

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FINNEGAN, J ;

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[20]

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