TIB2 AND ZRB2 DIFFUSION-BARRIERS IN GAAS OHMIC CONTACT TECHNOLOGY

被引：55

作者：

SHAPPIRIO, J ^{[1
]}

FINNEGAN, J ^{[1
]}

LUX, R ^{[1
]}

FOX, D ^{[1
]}

KWIATKOWSKI, J ^{[1
]}

KATTELUS, H ^{[1
]}

NICOLET, M ^{[1
]}

机构：

[1] CALTECH,PASADENA,CA 91125

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1985年 / 3卷 / 06期

关键词：

D O I：

10.1116/1.572902

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：2255 / 2258

页数：4

共 12 条

[1] MODELS FOR CONTACTS TO PLANAR DEVICES [J].

BERGER, HH .

SOLID-STATE ELECTRONICS, 1972, 15 (02) :145-&

[2] AN EFFICIENT INTEGRATION TECHNIQUE FOR USE IN THE MULTILAYER ANALYSIS OF SPREADING RESISTANCE PROFILES [J].

BERKOWITZ, HL ;

LUX, RA .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (05) :1137-1141

[3]

BRASLAU N, 1982, INTERFACES CONTACTS, P393

[4] OHMIC CONTACTS FOR GAAS DEVICES [J].

COX, RH ;

STRACK, H .

SOLID-STATE ELECTRONICS, 1967, 10 (12) :1213-+

[5]

FINNETI M, 1984, IEEE ELECTRON DEVICE, V5, P524

[6] SINGLE-STEP OPTICAL LIFT-OFF PROCESS [J].

HATZAKIS, M ;

CANAVELLO, BJ ;

SHAW, JM .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1980, 24 (04) :452-460

[7]

MACKEY HM, 1977, I PHYS C SER B, V33, P254

[8] THE CHARACTERISTICS OF AU-GE-BASED OHMIC CONTACTS TO N-GAAS INCLUDING THE EFFECTS OF AGING [J].

MARLOW, GS ;

DAS, MB ;

TONGSON, L .

SOLID-STATE ELECTRONICS, 1983, 26 (04) :259-&

[9]

NICOLET MA, 1983, SOLID STATE TECHNOL, V26, P129

[10]

SEVERIN P, 1974, NBS SPECIAL PUBLICAT

← 1 2 →