EPITAXIAL PHASE-TRANSITIONS IN THE IRON SILICON SYSTEM

被引:46
作者
VONKANEL, H
ONDA, N
SIRRINGHAUS, H
MULLERGUBLER, E
GONCALVESCONTO, S
SCHWARZ, C
机构
[1] Laboratorium für Festkörperphysik, ETH-Zürich
关键词
D O I
10.1016/0169-4332(93)90579-Z
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The properties of a newly discovered pseudomorphic FeSi/Si(111) phase with the CsCl structure are discussed. Upon annealing the new phase undergoes phase transitions to the stable epsilon-FeSi phase, either in epitaxial or polycrystalline form, depending on film thickness. Instead of transforming to epsilon-FeSi, very thin films (d < 15 angstrom) exhibit an uptake of Si up to the stoichiometry of FeSi2. The symmetry of the resulting phase remains unchanged, however, except for prolonged annealing close to the transition to beta-FeSi2, where the formation of fluorite gamma-FeSi2 grains is observed. We emphasize the far reaching consequences of the epitaxial stability of the defect-CsCl phase over a large range of compositions.
引用
收藏
页码:559 / 563
页数:5
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