STRUCTURE OF GE(111) SURFACES OBTAINED BY CLEAVAGE IN SUPERHIGH VACUUM AT LOW-TEMPERATURES

被引：24

作者：

ARISTOV, VY

GOLOVKO, NI

GRAZHULIS, VA

OSSIPYAN, YA

TALYANSKII, VI

机构：

来源：

SURFACE SCIENCE | 1982年 / 117卷 / 1-3期

关键词：

D O I：

10.1016/0039-6028(82)90501-5

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：204 / 207

页数：4

共 8 条

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MONCH, W .

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[5]

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[6]

OSSIPYAN YA, 1979, PISMA ESKP TEOR FIZ, V30, P253

[7] PHOTOEMISSION MEASUREMENTS OF STEP-DEPENDENT SURFACE STATES ON CLEAVED SILICON [J].

ROWE, JE ;

CHRISTMAN, SB ;

IBACH, H .

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[8]

VUL BM, 1979, PISMA ESKP TEOR FIZ, V30, P517

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