共 24 条
- [11] LANDREN G, 1984, J VAC SCI TECHNOL B, V2, P349
- [12] GAS-ADSORPTION ON CLEAVED GAAS(110) SURFACES STUDIED BY SURFACE PHOTO-VOLTAGE SPECTROSCOPY [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05): : 1200 - 1206
- [13] INTERFACE BEHAVIOR AND CRYSTALLOGRAPHIC RELATIONSHIPS OF ALUMINUM ON GAAS(100) SURFACES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03): : 667 - 673
- [15] CRYSTALLOGRAPHIC RELATIONSHIPS AND INTERFACIAL PROPERTIES OF AG ON GAAS(100) SURFACES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (02): : 599 - 606
- [16] ELECTRONIC SURFACE STATES ON CLEAN AND OXYGEN-EXPOSED GAAS SURFACES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (01): : 241 - 247
- [17] CORE-LEVEL PHOTOEMISSION-STUDIES OF MBE-GROWN SEMICONDUCTOR SURFACES [J]. PHYSICA B & C, 1983, 117 (MAR): : 819 - 821
- [19] OXIDATION PROPERTIES OF GAAS (110) SURFACES [J]. PHYSICAL REVIEW LETTERS, 1976, 37 (17) : 1166 - 1169
- [20] INTERACTION OF OXYGEN WITH CLEAVED GAAS - INFLUENCE OF THE CLEAVAGE DEFECTS [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1980, 13 (09): : 1845 - 1856