INCREASED AVALANCHE BREAKDOWN VOLTAGE AND CONTROLLED SURFACE ELECTRIC-FIELDS USING A JUNCTION TERMINATION EXTENSION (JTE) TECHNIQUE

被引：25

作者：

TEMPLE, VAK

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1983年 / 30卷 / 08期

关键词：

D O I：

10.1109/T-ED.1983.21243

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：954 / 957

页数：4

相关论文

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TEMPLE, VAK ;

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[3] SUBSTRATE ETCH GEOMETRY FOR NEAR IDEAL BREAKDOWN VOLTAGE IN P-N-JUNCTION DEVICES [J].

TEMPLE, VAK ;

ADLER, MS .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (08) :1077-1081

[4] PRACTICAL ASPECTS OF THE DEPLETION ETCH METHOD IN HIGH-VOLTAGE DEVICES [J].

TEMPLE, VAK .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (05) :977-982