SUBSTRATE ETCH GEOMETRY FOR NEAR IDEAL BREAKDOWN VOLTAGE IN P-N-JUNCTION DEVICES

被引：10

作者：

TEMPLE, VAK ^{[1
]}

ADLER, MS ^{[1
]}

机构：

[1] GE, CTR RES & DEV, SCHENECTADY, NY 12301 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1977年 / 24卷 / 08期

关键词：

D O I：

10.1109/T-ED.1977.18879

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：1077 / 1081

页数：5

相关论文

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[1] GENERAL METHOD FOR PREDICTING AVALANCHE BREAKDOWN VOLTAGE OF NEGATIVE BEVELLED DEVICES [J].

ADLER, MS ;

TEMPLE, VAK .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1976, 23 (08) :956-960

[2] DEPLETION LAYER CHARACTERISTICS AT SURFACE OF BEVELED HIGH-VOLTAGE P-N-JUNCTIONS [J].

BAKOWSKI, M ;

LUNDSTROM, KI .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1973, ED20 (06) :550-563

[3] FIELD DISTRIBUTION NEAR-SURFACE OF BEVELED P-N-JUNCTIONS IN HIGH-VOLTAGE DEVICES [J].

CORNU, J .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1973, ED20 (04) :347-352

[4] CONTROL OF ELECTRIC FIELD AT SURFACE OF P-N JUNCTIONS [J].

DAVIES, RL ;

GENTRY, FE .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1964, ED11 (07) :313-+

[5] THEORY AND APPLICATION OF A SIMPLE ETCH CONTOUR FOR NEAR IDEAL BREAKDOWN VOLTAGE IN PLANE AND PLANAR PN JUNCTIONS [J].

TEMPLE, VAK ;

ADLER, MS .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1976, 23 (08) :950-955