PRACTICAL ASPECTS OF THE DEPLETION ETCH METHOD IN HIGH-VOLTAGE DEVICES

被引：7

作者：

TEMPLE, VAK

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1980年 / 27卷 / 05期

关键词：

D O I：

10.1109/T-ED.1980.19967

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：977 / 982

页数：6

共 10 条

[1] GENERAL METHOD FOR PREDICTING AVALANCHE BREAKDOWN VOLTAGE OF NEGATIVE BEVELLED DEVICES [J].

ADLER, MS ;

TEMPLE, VAK .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1976, 23 (08) :956-960

[2] THEORY AND BREAKDOWN VOLTAGE FOR PLANAR DEVICES WITH A SINGLE FIELD LIMITING RING [J].

ADLER, MS ;

TEMPLE, VAK ;

FERRO, AP ;

RUSTAY, RC .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (02) :107-113

[3] DEPLETION LAYER CHARACTERISTICS AT SURFACE OF BEVELED HIGH-VOLTAGE P-N-JUNCTIONS [J].

BAKOWSKI, M ;

LUNDSTROM, KI .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1973, ED20 (06) :550-563

[4]

CORNU J, 1971, IEEE T ELECTRON DEV, V18, P347

[5] CONTROL OF ELECTRIC FIELD AT SURFACE OF P-N JUNCTIONS [J].

DAVIES, RL ;

GENTRY, FE .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1964, ED11 (07) :313-+

[6]

OVERSTRAETEN RV, 1970, SOLID STATE ELECT, V13, P583, DOI DOI 10.1016/0038-1101(70)90139-5

[7]

Temple V. A. K., 1977, 1977 International Electron Devices Meeting, P423, DOI 10.1109/IEDM.1977.189277

[8] THEORY AND APPLICATION OF A SIMPLE ETCH CONTOUR FOR NEAR IDEAL BREAKDOWN VOLTAGE IN PLANE AND PLANAR PN JUNCTIONS [J].

TEMPLE, VAK ;

ADLER, MS .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1976, 23 (08) :950-955

[9] PLANAR JUNCTION ETCH FOR HIGH-VOLTAGE AND LOW SURFACE FIELDS IN PLANAR DEVICES [J].

TEMPLE, VAK ;

BALIGA, BJ ;

ADLER, MS .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (11) :1304-1310

[10] SUBSTRATE ETCH GEOMETRY FOR NEAR IDEAL BREAKDOWN VOLTAGE IN P-N-JUNCTION DEVICES [J].

TEMPLE, VAK ;

ADLER, MS .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (08) :1077-1081

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