PLANAR JUNCTION ETCH FOR HIGH-VOLTAGE AND LOW SURFACE FIELDS IN PLANAR DEVICES

被引：8

作者：

TEMPLE, VAK ^{[1
]}

BALIGA, BJ ^{[1
]}

ADLER, MS ^{[1
]}

机构：

[1] GE, CTR RES & DEV, SCHENECTADY, NY 12301 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1977年 / 24卷 / 11期

关键词：

D O I：

10.1109/T-ED.1977.19002

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1304 / 1310

页数：7

共 15 条

[1] GENERAL METHOD FOR PREDICTING AVALANCHE BREAKDOWN VOLTAGE OF NEGATIVE BEVELLED DEVICES [J].

ADLER, MS ;

TEMPLE, VAK .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1976, 23 (08) :956-960

[2] THEORY AND BREAKDOWN VOLTAGE FOR PLANAR DEVICES WITH A SINGLE FIELD LIMITING RING [J].

ADLER, MS ;

TEMPLE, VAK ;

FERRO, AP ;

RUSTAY, RC .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (02) :107-113

[3]

ADLER MS, 75CRD149 GE INT REP

[4] FIELD DISTRIBUTION NEAR-SURFACE OF BEVELED P-N-JUNCTIONS IN HIGH-VOLTAGE DEVICES [J].

CORNU, J .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1973, ED20 (04) :347-352

[5] DOUBLE POSITIVE BEVELING - BETTER EDGE CONTOUR FOR HIGH-VOLTAGE DEVICES [J].

CORNU, J ;

SCHWEITZER, S ;

KUHN, O .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1974, ED21 (03) :181-184

[6] CONTROL OF ELECTRIC FIELD AT SURFACE OF P-N JUNCTIONS [J].

DAVIES, RL ;

GENTRY, FE .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1964, ED11 (07) :313-+

[7]

FINNE RM, 1967, J ELECTROCHEM SOC SO, V9, P967

[8] HIGH-VOLTAGE PLANAR P-N JUNCTIONS [J].

KAO, YC ;

WOLLEY, ED .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (08) :1409-+

[9]

PRICE JB, 1973, ELECTROCHEMICAL SOC, P339

[10] AVALANCHE BREAKDOWN VOLTAGES OF ABRUPT AND LINEARLY GRADED P-N JUNCTIONS IN GE SI GAAS AND GAP - (DOPANT EFFECTS IMPURITY EFFECTS T) [J].

SZE, SM ;

GIBBONS, G .

APPLIED PHYSICS LETTERS, 1966, 8 (05) :111-&

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