DOMINANCE OF AUGER RECOMBINATION IN INGAASP LIGHT-EMITTING DIODE CURRENT-POWER CHARACTERISTICS

被引：18

作者：

UJI, T ^{[1
]}

IWAMOTO, K ^{[1
]}

LANG, R ^{[1
]}

机构：

[1] NIPPON ELECT CO LTD,DIV LSI 2,KAWASAKI 211,JAPAN

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1983年 / 30卷 / 04期

关键词：

D O I：

10.1109/T-ED.1983.21123

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：316 / 320

页数：5

相关论文

共 22 条

[1] THE TEMPERATURE-DEPENDENCE OF THE EFFICIENCY AND THRESHOLD CURRENT OF IN1-XGAXASYP1-Y LASERS RELATED TO INTERVALENCE BAND ABSORPTION
ADAMS, AR
ASADA, M
SUEMATSU, Y
ARAI, S
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (10) : L621 - L624
[2] CASEY HC, 1978, J APPL PHYS, V49, P3684, DOI 10.1063/1.325421
[3] COMMENTS ON THE NATURE OF ELECTRON LEAKAGE IN INGAASP/INP DOUBLE HETEROSTRUCTURE
CHIU, LC
YARIV, A
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (05): : L305 - L306
[4] INTERBAND AUGER RECOMBINATION IN INGAASP
CHIU, LC
CHEN, PC
YARIV, A
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1982, 18 (06) : 938 - 941
[5] TEMPERATURE-DEPENDENCE OF THE LASING CHARACTERISTICS OF THE 1.3-MU-M INGAASP-INP AND GAAS-AL0.36GA0.64AS DH LASERS
DUTTA, NK
NELSON, RJ
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1982, 18 (05) : 871 - 878
[6] DUTTA NK, 1981, APPL PHYS LETT, V38, P407, DOI 10.1063/1.92380
[7] TEMPERATURE-DEPENDENCE OF THRESHOLD CURRENT FOR DOUBLE-HETEROJUNCTION LASERS
ETTENBERG, M
NUESE, CJ
KRESSEL, H
[J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (04) : 2949 - 2950
[8] RADIANCE SATURATION IN SMALL-AREA GALNASP-LNP AND GAALAS-GAAS LEDS
GOODFELLOW, RC
CARTER, AC
REES, GJ
DAVIS, R
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (04) : 365 - 371
[9] TEMPERATURE SENSITIVE THRESHOLD CURRENT OF INGAASP-INP DOUBLE HETEROSTRUCTURE LASERS
HORIKOSHI, Y
FURUKAWA, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1979, 18 (04) : 809 - 815
[10] KAMATA N, 1982, 14TH C 1982 INT SOL