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DOMINANCE OF AUGER RECOMBINATION IN INGAASP LIGHT-EMITTING DIODE CURRENT-POWER CHARACTERISTICS
被引:18
作者
:
UJI, T
论文数:
0
引用数:
0
h-index:
0
机构:
NIPPON ELECT CO LTD,DIV LSI 2,KAWASAKI 211,JAPAN
NIPPON ELECT CO LTD,DIV LSI 2,KAWASAKI 211,JAPAN
UJI, T
[
1
]
IWAMOTO, K
论文数:
0
引用数:
0
h-index:
0
机构:
NIPPON ELECT CO LTD,DIV LSI 2,KAWASAKI 211,JAPAN
NIPPON ELECT CO LTD,DIV LSI 2,KAWASAKI 211,JAPAN
IWAMOTO, K
[
1
]
LANG, R
论文数:
0
引用数:
0
h-index:
0
机构:
NIPPON ELECT CO LTD,DIV LSI 2,KAWASAKI 211,JAPAN
NIPPON ELECT CO LTD,DIV LSI 2,KAWASAKI 211,JAPAN
LANG, R
[
1
]
机构
:
[1]
NIPPON ELECT CO LTD,DIV LSI 2,KAWASAKI 211,JAPAN
来源
:
IEEE TRANSACTIONS ON ELECTRON DEVICES
|
1983年
/ 30卷
/ 04期
关键词
:
D O I
:
10.1109/T-ED.1983.21123
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:316 / 320
页数:5
相关论文
共 22 条
[11]
LANG R, 1982, 8TH IEEE INT SEM LAS
[12]
HOT-CARRIER EFFECTS IN 1.3-MU IN1-XGAXASYP1-Y LIGHT-EMITTING-DIODES
SHAH, J
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
SHAH, J
LEHENY, RF
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
LEHENY, RF
NAHORY, RE
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
NAHORY, RE
TEMKIN, H
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
TEMKIN, H
[J].
APPLIED PHYSICS LETTERS,
1981,
39
(08)
: 618
-
620
[13]
CALCULATED SPECTRAL DEPENDENCE OF GAIN IN EXCITED GAAS
STERN, F
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
STERN, F
[J].
JOURNAL OF APPLIED PHYSICS,
1976,
47
(12)
: 5382
-
5386
[14]
MEASUREMENT OF RADIATIVE AND AUGER RECOMBINATION RATES IN P-TYPE INGAASP DIODE-LASERS
SU, CB
论文数:
0
引用数:
0
h-index:
0
SU, CB
SCHLAFER, J
论文数:
0
引用数:
0
h-index:
0
SCHLAFER, J
MANNING, J
论文数:
0
引用数:
0
h-index:
0
MANNING, J
OLSHANSKY, R
论文数:
0
引用数:
0
h-index:
0
OLSHANSKY, R
[J].
ELECTRONICS LETTERS,
1982,
18
(14)
: 595
-
596
[15]
BAND-TO-BAND AUGER RECOMBINATION EFFECT ON INGAASP LASER THRESHOLD
SUGIMURA, A
论文数:
0
引用数:
0
h-index:
0
SUGIMURA, A
[J].
IEEE JOURNAL OF QUANTUM ELECTRONICS,
1981,
17
(05)
: 627
-
635
[16]
BAND-TO-BAND AUGER EFFECT ON THE OUTPUT POWER SATURATION IN INGAASP LEDS
SUGIMURA, A
论文数:
0
引用数:
0
h-index:
0
SUGIMURA, A
[J].
IEEE JOURNAL OF QUANTUM ELECTRONICS,
1981,
17
(04)
: 441
-
444
[17]
TOMPSON GHB, 1980, ELECTRON LETT, V16, P42
[18]
NONRADIATIVE RECOMBINATION IN INGAASP-INP LIGHT-SOURCES CAUSING LIGHT-EMITTING DIODE OUTPUT SATURATION AND STRONG LASER-THRESHOLD-CURRENT TEMPERATURE SENSITIVITY
UJI, T
论文数:
0
引用数:
0
h-index:
0
UJI, T
IWAMOTO, K
论文数:
0
引用数:
0
h-index:
0
IWAMOTO, K
LANG, R
论文数:
0
引用数:
0
h-index:
0
LANG, R
[J].
APPLIED PHYSICS LETTERS,
1981,
38
(04)
: 193
-
195
[19]
DIRECT OBSERVATION OF ELECTRON LEAKAGE IN INGAASP/INP DOUBLE HETEROSTRUCTURE
YAMAKOSHI, S
论文数:
0
引用数:
0
h-index:
0
YAMAKOSHI, S
SANADA, T
论文数:
0
引用数:
0
h-index:
0
SANADA, T
WADA, O
论文数:
0
引用数:
0
h-index:
0
WADA, O
UMEBU, I
论文数:
0
引用数:
0
h-index:
0
UMEBU, I
SAKURAI, T
论文数:
0
引用数:
0
h-index:
0
SAKURAI, T
[J].
APPLIED PHYSICS LETTERS,
1982,
40
(02)
: 144
-
146
[20]
IN1-XGAXASYP1-Y-INP DH LASERS FABRICATED ON INP (100) SUBSTRATES
论文数:
引用数:
h-index:
机构:
YAMAMOTO, T
论文数:
引用数:
h-index:
机构:
SAKAI, K
AKIBA, S
论文数:
0
引用数:
0
h-index:
0
机构:
TOKYO INST TECHNOL,DEPT PHYS ELECTR,TOKYO 152,JAPAN
TOKYO INST TECHNOL,DEPT PHYS ELECTR,TOKYO 152,JAPAN
AKIBA, S
SUEMATSU, Y
论文数:
0
引用数:
0
h-index:
0
机构:
TOKYO INST TECHNOL,DEPT PHYS ELECTR,TOKYO 152,JAPAN
TOKYO INST TECHNOL,DEPT PHYS ELECTR,TOKYO 152,JAPAN
SUEMATSU, Y
[J].
IEEE JOURNAL OF QUANTUM ELECTRONICS,
1978,
14
(02)
: 95
-
98
←
1
2
3
→
共 22 条
[11]
LANG R, 1982, 8TH IEEE INT SEM LAS
[12]
HOT-CARRIER EFFECTS IN 1.3-MU IN1-XGAXASYP1-Y LIGHT-EMITTING-DIODES
SHAH, J
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
SHAH, J
LEHENY, RF
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
LEHENY, RF
NAHORY, RE
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
NAHORY, RE
TEMKIN, H
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
TEMKIN, H
[J].
APPLIED PHYSICS LETTERS,
1981,
39
(08)
: 618
-
620
[13]
CALCULATED SPECTRAL DEPENDENCE OF GAIN IN EXCITED GAAS
STERN, F
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
STERN, F
[J].
JOURNAL OF APPLIED PHYSICS,
1976,
47
(12)
: 5382
-
5386
[14]
MEASUREMENT OF RADIATIVE AND AUGER RECOMBINATION RATES IN P-TYPE INGAASP DIODE-LASERS
SU, CB
论文数:
0
引用数:
0
h-index:
0
SU, CB
SCHLAFER, J
论文数:
0
引用数:
0
h-index:
0
SCHLAFER, J
MANNING, J
论文数:
0
引用数:
0
h-index:
0
MANNING, J
OLSHANSKY, R
论文数:
0
引用数:
0
h-index:
0
OLSHANSKY, R
[J].
ELECTRONICS LETTERS,
1982,
18
(14)
: 595
-
596
[15]
BAND-TO-BAND AUGER RECOMBINATION EFFECT ON INGAASP LASER THRESHOLD
SUGIMURA, A
论文数:
0
引用数:
0
h-index:
0
SUGIMURA, A
[J].
IEEE JOURNAL OF QUANTUM ELECTRONICS,
1981,
17
(05)
: 627
-
635
[16]
BAND-TO-BAND AUGER EFFECT ON THE OUTPUT POWER SATURATION IN INGAASP LEDS
SUGIMURA, A
论文数:
0
引用数:
0
h-index:
0
SUGIMURA, A
[J].
IEEE JOURNAL OF QUANTUM ELECTRONICS,
1981,
17
(04)
: 441
-
444
[17]
TOMPSON GHB, 1980, ELECTRON LETT, V16, P42
[18]
NONRADIATIVE RECOMBINATION IN INGAASP-INP LIGHT-SOURCES CAUSING LIGHT-EMITTING DIODE OUTPUT SATURATION AND STRONG LASER-THRESHOLD-CURRENT TEMPERATURE SENSITIVITY
UJI, T
论文数:
0
引用数:
0
h-index:
0
UJI, T
IWAMOTO, K
论文数:
0
引用数:
0
h-index:
0
IWAMOTO, K
LANG, R
论文数:
0
引用数:
0
h-index:
0
LANG, R
[J].
APPLIED PHYSICS LETTERS,
1981,
38
(04)
: 193
-
195
[19]
DIRECT OBSERVATION OF ELECTRON LEAKAGE IN INGAASP/INP DOUBLE HETEROSTRUCTURE
YAMAKOSHI, S
论文数:
0
引用数:
0
h-index:
0
YAMAKOSHI, S
SANADA, T
论文数:
0
引用数:
0
h-index:
0
SANADA, T
WADA, O
论文数:
0
引用数:
0
h-index:
0
WADA, O
UMEBU, I
论文数:
0
引用数:
0
h-index:
0
UMEBU, I
SAKURAI, T
论文数:
0
引用数:
0
h-index:
0
SAKURAI, T
[J].
APPLIED PHYSICS LETTERS,
1982,
40
(02)
: 144
-
146
[20]
IN1-XGAXASYP1-Y-INP DH LASERS FABRICATED ON INP (100) SUBSTRATES
论文数:
引用数:
h-index:
机构:
YAMAMOTO, T
论文数:
引用数:
h-index:
机构:
SAKAI, K
AKIBA, S
论文数:
0
引用数:
0
h-index:
0
机构:
TOKYO INST TECHNOL,DEPT PHYS ELECTR,TOKYO 152,JAPAN
TOKYO INST TECHNOL,DEPT PHYS ELECTR,TOKYO 152,JAPAN
AKIBA, S
SUEMATSU, Y
论文数:
0
引用数:
0
h-index:
0
机构:
TOKYO INST TECHNOL,DEPT PHYS ELECTR,TOKYO 152,JAPAN
TOKYO INST TECHNOL,DEPT PHYS ELECTR,TOKYO 152,JAPAN
SUEMATSU, Y
[J].
IEEE JOURNAL OF QUANTUM ELECTRONICS,
1978,
14
(02)
: 95
-
98
←
1
2
3
→