PROPOSED SIZE-EFFECT HIGH-ELECTRON-MOBILITY TRANSISTOR

被引：16

作者：

KORNREICH, PG

WALSH, L

FLATTERY, J

ISA, S

机构：

[1] Syracuse Univ, Syracuse, NY, USA, Syracuse Univ, Syracuse, NY, USA

来源：

SOLID-STATE ELECTRONICS | 1986年 / 29卷 / 04期

关键词：

D O I：

10.1016/0038-1101(86)90089-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

TRANSISTORS, FIELD EFFECT

引用

页码：421 / 428

页数：8

共 14 条

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