SCHOTTKY BARRIER PHOTODIODES WITH ANTIREFLECTION COATING

[1] ABELES F, 1965, PHYSICS THIN FILMS, V3

[2] MICROWAVE PHOTODIODES EXHIBITING MICROPLASMA-FREE CARRIER MULTIPLICATION (SI P-N JUNCTIONS 3 GC/SEC E) [J]. APPLIED PHYSICS LETTERS, 1965, 6 (04) : 62 - +

[3] ANDERSON LK, 1963, APR P S OPT MAS, V8, P549

[4] [Anonymous], 1939, WISS VEROFF SIEMENS

[5] BEHRNDT KH, 1867, DEPOSITION PROCESSES, V1

[6] INFRARED REFLECTANCE AND EMITTANCE OF SILVER AND GOLD EVAPORATED IN ULTRAHIGH VACUUM [J]. APPLIED OPTICS, 1965, 4 (02): : 221 - &

[7] BUNSHAH RF, 1867, DEPOSITION PROCES ED, V1

[8] INFLUENCE OF ELECTRIC FIELD ON GROWTH OF THIN METAL FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (06) : 2249 - &

[9] SURFACE STATES AND BARRIER HEIGHT OF METAL-SEMICONDUCTOR SYSTEMS [J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (10) : 3212 - &

[10] DELOACH BC, PERSONAL COMMUNICATI

[1] ABELES F, 1965, PHYSICS THIN FILMS, V3

[2] MICROWAVE PHOTODIODES EXHIBITING MICROPLASMA-FREE CARRIER MULTIPLICATION (SI P-N JUNCTIONS 3 GC/SEC E) [J]. APPLIED PHYSICS LETTERS, 1965, 6 (04) : 62 - +

[3] ANDERSON LK, 1963, APR P S OPT MAS, V8, P549

[4] [Anonymous], 1939, WISS VEROFF SIEMENS

[5] BEHRNDT KH, 1867, DEPOSITION PROCESSES, V1

[6] INFRARED REFLECTANCE AND EMITTANCE OF SILVER AND GOLD EVAPORATED IN ULTRAHIGH VACUUM [J]. APPLIED OPTICS, 1965, 4 (02): : 221 - &

[7] BUNSHAH RF, 1867, DEPOSITION PROCES ED, V1

[8] INFLUENCE OF ELECTRIC FIELD ON GROWTH OF THIN METAL FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (06) : 2249 - &

[9] SURFACE STATES AND BARRIER HEIGHT OF METAL-SEMICONDUCTOR SYSTEMS [J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (10) : 3212 - &

[10] DELOACH BC, PERSONAL COMMUNICATI