SILICON-ON-INSULATOR FILMS OBTAINED BY ETCHBACK OF BONDED WAFERS

被引：9

作者：

HARENDT, C

APPEL, W

GRAF, HG

HOFFLINGER, B

PENTEKER, E

机构：

来源：

关键词：

D O I：

10.1149/1.2096504

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：3547 / 3548

页数：2

共 7 条

[1]

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[3] BONDING OF SILICON-WAFERS FOR SILICON-ON-INSULATOR [J].

MASZARA, WP ;

GOETZ, G ;

CAVIGLIA, A ;

MCKITTERICK, JB .

[4]

MURAOKA H, 1973, SEMICONDUCTOR SILICO, P327

[5]

OHASHI H, 1987, P INT ELECTRON DEVIC, P678

[6]

SEIDEL H, 1982, ELECTROCHEM SOC EXT, P194

[7] BUBBLE-FREE SILICON-WAFER BONDING IN A NON-CLEANROOM ENVIRONMENT [J].

STENGL, R ;

AHN, KY ;

GOSELE, U .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (12) :L2364-L2366