EFFECTS OF LIGHT AND MODULATION FREQUENCY ON SPIN-DEPENDENT TRAPPING AT SILICON GRAIN-BOUNDARIES

[1] POLYCRYSTALLINE SILICON SOLAR CELLS ON LOW-COST FOREIGN SUBSTRATES [J]. SOLAR ENERGY, 1975, 17 (04) : 229 - 235

[2] ELECTRONIC PROPERTIES OF CHEMICALLY DEPOSITED POLYCRYSTALLINE SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (01) : 377 - 382

[3] DEUTERIUM PASSIVATION OF GRAIN-BOUNDARY DANGLING BONDS IN SILICON THIN-FILMS [J]. APPLIED PHYSICS LETTERS, 1982, 40 (10) : 882 - 884

[4] KAPLAN D, 1978, J PHYS LETT-PARIS, V39, pL51, DOI 10.1051/jphyslet:0197800390405100

[5] EFFECT OF BIAS ON RADIATION-INDUCED PARAMAGNETIC DEFECTS AT THE SILICON-SILICON DIOXIDE INTERFACE [J]. APPLIED PHYSICS LETTERS, 1982, 41 (06) : 542 - 544

[6] PARAMAGNETIC TRIVALENT SILICON CENTERS IN GAMMA-IRRADIATED METAL-OXIDE-SILICON STRUCTURES [J]. APPLIED PHYSICS LETTERS, 1984, 44 (01) : 96 - 98

[7] SPIN DEPENDENT TRAPPING AT A SILICON GRAIN-BOUNDARY [J]. SOLID STATE COMMUNICATIONS, 1983, 47 (06) : 423 - 425

[8] LENAHAN PM, 1983, J APPL PHYS, V54, P1957

[9] SPIN-DEPENDENT RECOMBINATION ON SILICON SURFACE [J]. PHYSICAL REVIEW B, 1972, 6 (02): : 436 - &

[10] DC VOLTAGE DEPENDENCE OF SEMICONDUCTOR GRAIN-BOUNDARY RESISTANCE [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (05) : 3414 - 3422

[1] POLYCRYSTALLINE SILICON SOLAR CELLS ON LOW-COST FOREIGN SUBSTRATES [J]. SOLAR ENERGY, 1975, 17 (04) : 229 - 235

[2] ELECTRONIC PROPERTIES OF CHEMICALLY DEPOSITED POLYCRYSTALLINE SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (01) : 377 - 382

[3] DEUTERIUM PASSIVATION OF GRAIN-BOUNDARY DANGLING BONDS IN SILICON THIN-FILMS [J]. APPLIED PHYSICS LETTERS, 1982, 40 (10) : 882 - 884

[4] KAPLAN D, 1978, J PHYS LETT-PARIS, V39, pL51, DOI 10.1051/jphyslet:0197800390405100

[5] EFFECT OF BIAS ON RADIATION-INDUCED PARAMAGNETIC DEFECTS AT THE SILICON-SILICON DIOXIDE INTERFACE [J]. APPLIED PHYSICS LETTERS, 1982, 41 (06) : 542 - 544

[6] PARAMAGNETIC TRIVALENT SILICON CENTERS IN GAMMA-IRRADIATED METAL-OXIDE-SILICON STRUCTURES [J]. APPLIED PHYSICS LETTERS, 1984, 44 (01) : 96 - 98

[7] SPIN DEPENDENT TRAPPING AT A SILICON GRAIN-BOUNDARY [J]. SOLID STATE COMMUNICATIONS, 1983, 47 (06) : 423 - 425

[8] LENAHAN PM, 1983, J APPL PHYS, V54, P1957

[9] SPIN-DEPENDENT RECOMBINATION ON SILICON SURFACE [J]. PHYSICAL REVIEW B, 1972, 6 (02): : 436 - &

[10] DC VOLTAGE DEPENDENCE OF SEMICONDUCTOR GRAIN-BOUNDARY RESISTANCE [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (05) : 3414 - 3422