MINIATURE MICROMACHINED FABRY-PEROT INTERFEROMETERS IN SILICON

被引：32

作者：

MALLINSON, SR ^{[1
]}

JERMAN, JH ^{[1
]}

机构：

[1] IC SENSORS,MILPITAS,CA 95035

来源：

ELECTRONICS LETTERS | 1987年 / 23卷 / 20期

关键词：

SEMICONDUCTING SILICON;

D O I：

10.1049/el:19870728

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new technique for the manufacture of miniature Fabry-Perot interferometers in silicon for use in the near-infra-red region is described. Tuning and parallelism control were achieved electrostatically, yielding low drive voltages and finesses exceeding 90 at 1. 4 mu m. Such devices will prove useful for laser intracavity elements and wavelength demultiplexers in fiber telecommunication systems.

引用

页码：1041 / 1043

页数：3

共 4 条

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MALLINSON, SR .

APPLIED OPTICS, 1987, 26 (03) :430-436

[4] Single-crystal silicon: a new material for 1.3 and 1.6 μm integrated-optical components [J].

Soref, R. A. ;

Lorenzo, J. P. .

ELECTRONICS LETTERS, 2009, :26-27

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