(NH4)2SX-TREATED INP(001) STUDIED BY HIGH-RESOLUTION X-RAY PHOTOELECTRON-SPECTROSCOPY

被引：50

作者：

FUKUDA, Y ^{[1
]}

SUZUKI, Y ^{[1
]}

SANADA, N ^{[1
]}

SASAKI, S ^{[1
]}

OHSAWA, T ^{[1
]}

机构：

[1] SEIKO INSTRUMENTS INC,OYAMA,SHIZUOKA 41013,JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1994年 / 76卷 / 05期

关键词：

D O I：

10.1063/1.357487

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The chemical state of sulfur on (NH4)2Sx-treated InP(001) surfaces has been studied by high-resolution x-ray photoelectron spectroscopy. We find three kinds of chemical states of sulfur (S2p3/2 lines at 161.2, 162.0, and 163.4 eV) on the sample treated at RT. It is suggested that they correspond to sulfur in phosphorus sites (in the second layer of the InP(001) surface), to sulfur bonded to indium on the first layer, and to elemental sulfur on sulfide, respectively. One (S2p3/2 = 162.0 eV) of them becomes predominant with long-time exposure to atmosphere at RT. Upon annealing the sample at 400-degrees-C, the 163.4 eV line disappears, while the lines at 162.0 and 161.2 eV remain on the surface. A model of the treated surface is presented.

引用

页码：3059 / 3062

页数：4

共 24 条

[1] SURFACE CORE-LEVEL SHIFTS OF INAS(110)
ANDERSEN, JN
KARLSSON, UO
[J]. PHYSICAL REVIEW B, 1990, 41 (06): : 3844 - 3846
[2] Band I. M., 1979, Atomic Data and Nuclear Data Tables, V23, P443, DOI 10.1016/0092-640X(79)90027-5
[3] HIGH-EFFICIENCY 90-GHZ INP GUNN OSCILLATORS
CROWLEY, JD
SOWERS, JJ
JANIS, BA
FANK, FB
[J]. ELECTRONICS LETTERS, 1980, 16 (18) : 705 - 706
[4] CHEMICAL, STRUCTURAL, AND ELECTRONIC-PROPERTIES OF SULFUR-PASSIVATED INP(001) (2X1) SURFACES TREATED WITH (NH4)2SX
GALLET, D
HOLLINGER, G
[J]. APPLIED PHYSICS LETTERS, 1993, 62 (09) : 982 - 984
[5] HASEGAWA H, 1988, 20TH C SOLID STAT DE, P263
[6] N-CHANNEL MISFETS ON SEMI-INSULATING INP FOR LOGIC APPLICATIONS
HENRY, L
LECROSNIER, D
LHARIDON, H
PAUGAM, J
PELOUS, G
RICHOU, F
SALVI, M
[J]. ELECTRONICS LETTERS, 1982, 18 (02) : 102 - 103
[7] EVIDENCE FOR A NEW PASSIVATING INDIUM RICH PHOSPHATE PREPARED BY ULTRAVIOLET OZONE OXIDATION OF INP
HOLLINGER, G
GALLET, D
GENDRY, M
BESLAND, MP
JOSEPH, J
[J]. APPLIED PHYSICS LETTERS, 1991, 59 (13) : 1617 - 1619
[8] THE PASSIVATION OF INP BY ARSENIC SURFACE STABILIZATION AND AL2O3 DEPOSITION - CORRELATIONS BETWEEN INTERFACE CHEMISTRY AND CAPACITANCE MEASUREMENTS
HOLLINGER, G
BLANCHET, R
GENDRY, M
SANTINELLI, C
SKHEYTA, R
VIKTOROVITCH, P
[J]. JOURNAL OF APPLIED PHYSICS, 1990, 67 (09) : 4173 - 4182
[9] ELECTRON-CYCLOTRON-RESONANCE PLASMA PROCESS FOR INP PASSIVATION
HU, YZ
LI, M
WANG, Y
IRENE, EA
ROWE, M
CASEY, HC
[J]. APPLIED PHYSICS LETTERS, 1993, 63 (08) : 1113 - 1115
[10] ROLE OF POLYSULFIDES IN THE PASSIVATION OF THE INP SURFACE
IYER, R
LILE, DL
[J]. APPLIED PHYSICS LETTERS, 1991, 59 (04) : 437 - 439

← 1 2 3 →