CHARACTERISTICS OF ANNEALED P/N JUNCTIONS BETWEEN GAAS AND SI(100)

被引：3

作者：

UNLU, MS

MUNNS, G

CHEN, J

WON, T

UNLU, H

MORKOC, H

RADHAKRISHNAN, G

KATZ, J

VERRET, D

机构：

[1] CALTECH,JET PROP LAB,PASADENA,CA 91109

[2] TEXAS INSTRUMENTS,HOUSTON,TX 77001

来源：

APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 24期

关键词：

D O I：

10.1063/1.98322

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1995 / 1997

页数：3

共 18 条

[1] BIATOMIC STEPS ON (001) SILICON SURFACES [J].

ASPNES, DE ;

IHM, J .

PHYSICAL REVIEW LETTERS, 1986, 57 (24) :3054-3057

[2]

CHEN HZ, 1987, OPT LETT OCT

[3] EFFECT OF INSITU AND EXSITU ANNEALING ON DISLOCATIONS IN GAAS ON SI SUBSTRATES [J].

CHOI, C ;

OTSUKA, N ;

MUNNS, G ;

HOUDRE, R ;

MORKOC, H ;

ZHANG, SL ;

LEVI, D ;

KLEIN, MV .

APPLIED PHYSICS LETTERS, 1987, 50 (15) :992-994

[4] MONOLITHIC INTEGRATION OF GAAS/ALGAAS DOUBLE-HETEROSTRUCTURE LEDS AND SI MOSFETS [J].

CHOI, HK ;

TURNER, GW ;

WINDHORN, TH ;

TSAUR, BY .

IEEE ELECTRON DEVICE LETTERS, 1986, 7 (09) :500-502

[5] MONOLITHIC INTEGRATION OF GAAS/ALGAAS MODULATION-DOPED FIELD-EFFECT TRANSISTORS AND N-METAL-OXIDE-SEMICONDUCTOR SILICON CIRCUITS [J].

FISCHER, R ;

HENDERSON, T ;

KLEM, J ;

KOPP, W ;

PENG, CK ;

MORKOC, H ;

DETRY, J ;

BLACKSTONE, SC .

APPLIED PHYSICS LETTERS, 1985, 47 (09) :983-985

[6]

FISCHER R, 1985, J APPL PHYS, V58, P378

[7]

FISCHER R, 1986, APPL PHYS LETT, V48, P413

[8]

HOUDRE R, IN PRESS CRC CRIT RE

[9]

KAWABE M, 1987, JPN J APPL PHYS, V26, pL127

[10]

KROEMER H, 1987, J CRYST GROWTH, V81, P197

← 1 2 →