ASYMMETRIC MELTING AND FREEZING KINETICS IN SILICON

被引:55
作者
TSAO, JY
AZIZ, MJ
THOMPSON, MO
PEERCY, PS
机构
[1] OAK RIDGE NATL LAB,OAK RIDGE,TN 37831
[2] CORNELL UNIV,DEPT MAT SCI,ITHACA,NY 14853
关键词
D O I
10.1103/PhysRevLett.56.2712
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:2712 / 2715
页数:4
相关论文
共 18 条
[1]   CRYSTALLIZATION RATES OF A LENNARD-JONES LIQUID [J].
BROUGHTON, JQ ;
GILMER, GH ;
JACKSON, KA .
PHYSICAL REVIEW LETTERS, 1982, 49 (20) :1496-1500
[2]   RAPID MELTING AND REGROWTH VELOCITIES IN SILICON HEATED BY ULTRAVIOLET PICOSECOND LASER-PULSES [J].
BUCKSBAUM, PH ;
BOKOR, J .
PHYSICAL REVIEW LETTERS, 1984, 53 (02) :182-185
[3]   SOUND-VELOCITY IN AMORPHOUS FILMS OF GERMANIUM AND SILICON [J].
COXSMITH, IR ;
LIANG, HC ;
DILLON, RO .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (03) :674-677
[4]   DEVICE FOR LASER-BEAM DIFFUSION AND HOMOGENIZATION [J].
CULLIS, AG ;
WEBBER, HC ;
BAILEY, P .
JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1979, 12 (08) :688-689
[5]   CALORIMETRIC STUDIES OF CRYSTALLIZATION AND RELAXATION OF AMORPHOUS SI AND GE PREPARED BY ION-IMPLANTATION [J].
DONOVAN, EP ;
SPAEPEN, F ;
TURNBULL, D ;
POATE, JM ;
JACOBSON, DC .
JOURNAL OF APPLIED PHYSICS, 1985, 57 (06) :1795-1804
[6]   SOLIDIFICATION KINETICS OF PULSED LASER MELTED SILICON BASED ON THERMODYNAMIC CONSIDERATIONS [J].
GALVIN, GJ ;
MAYER, JW ;
PEERCY, PS .
APPLIED PHYSICS LETTERS, 1985, 46 (07) :644-646
[7]   TIME-RESOLVED CONDUCTANCE AND REFLECTANCE MEASUREMENTS OF SILICON DURING PULSED-LASER ANNEALING [J].
GALVIN, GJ ;
THOMPSON, MO ;
MAYER, JW ;
PEERCY, PS ;
HAMMOND, RB ;
PAULTER, N .
PHYSICAL REVIEW B, 1983, 27 (02) :1079-1087
[8]  
Jackson K., 1983, SURFACE MODIFICATION, P51, DOI 10.1007/978-1-4613-3733-1_3
[9]  
JACKSON KA, 1975, TREATISE SOLID STATE, V5, P233
[10]  
Larson B. C., 1985, Energy Beam-Solid Interactions and Transient Thermal Processing/1984 Symposium, P187