SCATTERING BY IONIZATION AND PHONON EMISSION IN SEMICONDUCTORS .2. MONTE-CARLO CALCULATIONS

被引：49

作者：

ALIG, RC

机构：

来源：

PHYSICAL REVIEW B | 1983年 / 27卷 / 02期

关键词：

D O I：

10.1103/PhysRevB.27.968

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：968 / 977

页数：10

共 16 条

[1] SCATTERING BY IONIZATION AND PHONON EMISSION IN SEMICONDUCTORS [J].

ALIG, RC ;

BLOOM, S ;

STRUCK, CW .

PHYSICAL REVIEW B, 1980, 22 (12) :5565-5582

[2] OPTICAL-MODE DEFORMATION POTENTIAL [J].

ALIG, RC ;

BLOOM, S ;

INOUE, M .

JOURNAL DE PHYSIQUE, 1981, 42 (NC6) :484-486

[3] SIMULATION OF HIGH-FIELD TRANSPORT IN GAAS USING A MONTE-CARLO METHOD AND PSEUDOPOTENTIAL BAND STRUCTURES - BAND-STRUCTURE DEPENDENT TRANSPORT AND IMPACT IONIZATION IN GAAS - COMMENT [J].

CAPASSO, F ;

PEARSALL, TP ;

THORNBER, KK ;

NAHORY, RE ;

POLLACK, MA ;

BACHELET, GB ;

CHELIKOWSKY, JR .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (04) :3324-3326

[4]

Conwell E M, 1967, HIGH FIELD TRANSPORT

[5]

DENAU C, 1963, J PHYS RADIUM, V24, P284

[6] SCATTERING OF ELECTRONS BY LATTICE VIBRATIONS IN NONPOLAR CRYSTALS [J].

HARRISON, WA .

PHYSICAL REVIEW, 1956, 104 (05) :1281-1290

[7] QUANTUM YIELD OF ELECTRON-HOLE PAIRS IN SEMICONDUCTORS [J].

INOUE, M .

PHYSICAL REVIEW B, 1982, 25 (06) :3856-3864

[8]

KARTHEUSER E, 1972, POLARONS IONIC CRYST, P717

[9] CHARGE TRANSPORT IN LAYER SEMICONDUCTORS [J].

MINDER, R ;

OTTAVIANI, G ;

CANALI, C .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1976, 37 (04) :417-424

[10] THEORY OF OPTICAL-PHONON DEFORMATION POTENTIALS IN TETRAHEDRAL SEMICONDUCTORS [J].

POTZ, W ;

VOGL, P .

PHYSICAL REVIEW B, 1981, 24 (04) :2025-2037

← 1 2 →