MAGNETOTUNNELING IN ALXGA1-XAS CAPACITORS

被引：3

作者：

HICKMOTT, TW

机构：

来源：

PHYSICA B & C | 1985年 / 134卷 / 1-3期

关键词：

D O I：

10.1016/0378-4363(85)90312-2

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：3 / 11

页数：9

共 19 条

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[5] RESONANT FOWLER-NORDHEIM TUNNELING IN N-GAAS-UNDOPED ALXGA1-XAS-N+GAAS CAPACITORS [J].

HICKMOTT, TW ;

SOLOMON, PM ;

FISCHER, R ;

MORKOC, H .

APPLIED PHYSICS LETTERS, 1984, 44 (01) :90-92

[6] SEQUENTIAL SINGLE-PHONON EMISSION IN GAAS-ALXGA1-XAS TUNNEL-JUNCTIONS [J].

HICKMOTT, TW ;

SOLOMON, PM ;

FANG, FF ;

STERN, F ;

FISCHER, R ;

MORKOC, H .

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[7] NEGATIVE CHARGE, BARRIER HEIGHTS, AND THE CONDUCTION-BAND DISCONTINUITY IN ALXGA1-XAS CAPACITORS [J].

HICKMOTT, TW ;

SOLOMON, PM ;

FISCHER, R ;

MORKOC, H .

JOURNAL OF APPLIED PHYSICS, 1985, 57 (08) :2844-2853

[8]

HICKMOTT TW, 1985, 17TH P INT C PHYS SE, P417

[9]

HICKMOTT TW, UNPUB

[10]

IHM J, UNPUB PHYS REV LETT

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