ELECTRON AND ION-BEAM ANALYSIS OF COMPOSITION AND STRAIN IN SI1-XGEX SI HETEROSTRUCTURES

被引：10

作者：

ARMIGLIATO, A

GOVONI, D

BALBONI, R

FRABBONI, S

BERTI, M

ROMANATO, F

DRIGO, AV

机构：

[1] UNIV BRESCIA,FAC INGN,DIPARTIMENTO ELETTRON AUTOMAZ,I-25123 BRESCIA,ITALY

[2] UNIV MODENA,DIPARTIMENTO FIS,I-41100 MODENA,ITALY

[3] UNIV PADUA,DIPARTIMENTO FIS,I-35131 PADUA,ITALY

来源：

MIKROCHIMICA ACTA | 1994年 / 114卷

关键词：

SILICON-GERMANIUM ALLOYS; COMPOSITION DETERMINATION; LATTICE STRAIN DETERMINATION; CONVERGENT BEAM ELECTRON DIFFRACTION; ION BEAM ANALYSIS;

D O I：

10.1007/BF01244541

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

Si1-xGex heterostructures have been grown by molecular beam epitaxy, with nominal compositions of 10 and 15 at %. Analytical electron microscopy, Rutherford backscattering spectrometry and ion channeling have been used in order to determine film thickness, Ge molar fraction and tetragonal distortion. The actual Ge concentrations were found to be smaller than the nominal ones. For all the SiGe films a coherent growth was found, with a small deviation from the perfect tetragonal distortion. The good agreement found between the results obtained by each analytical technique demonstrate that these methods of characterization are powerful tools for the control of the epitaxial layer parameters.

引用

页码：175 / 185

页数：11

共 19 条

[1] STRUCTURAL AND ANALYTICAL CHARACTERIZATION OF SI(1-X)GEX/SI HETEROSTRUCTURES BY RUTHERFORD BACKSCATTERING SPECTROMETRY AND CHANNELING, ANALYTICAL ELECTRON-MICROSCOPY AND DOUBLE CRYSTAL X-RAY-DIFFRACTOMETRY [J].