LATTICE SITE LOCATION OF TE IN GAAS

被引：41

作者：

SMULDERS, PJM

BOERMA, DO

SHAANAN, M

机构：

[1] General Physics Laboratory (LAN), Materials Science Center, University of Groningen, 9718 CM Groningen

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1990年 / 45卷 / 1-4期

关键词：

Crystals; -; Microstructure; Ions; Tellurium;

D O I：

10.1016/0168-583X(90)90873-S

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The lattice site of donor Te atoms in GaAs was studied by the channeling technique in order to determine the position of the nonsubstitutional fraction. Single crystals of pure GaAs with a (100) orientation were implanted with 220 keV Te ions to a dose of 3 × 1014 cm-2. After rapid thermal annealing (820°C, 15 s) angular scans through three major axial directions were measured with 3.9 MeV He+ ions. A strong asymmetry, observed in 〈110〉 scans along a (211) plane, is discussed and quantitatively explained by Monte Carlo simulations. Analysis of the data for Te, by comparison with computer simulations, shows that practically all Te atoms are close to As sites, with an average displacement of 0.32 ± 0.04 A ̊. A clear separation in a substitutional fraction and a nonsubstitutional fraction at a unique site is not evident. The best overall fit for the Ga + As RBS spectra was obtained for thermal vibration amplitudes corresponding to a Debye temperature of 260 ± 10 K. © 1990.

引用

页码：450 / 454

页数：5

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