IMPLANTATION TEMPERATURE-DEPENDENCE OF ELECTRICAL ACTIVATION, SOLUBILITY, AND DIFFUSION OF IMPLANTED TE, CD, AND SN IN GAAS

被引：29

作者：

PEARTON, SJ

WILLIAMS, JS

SHORT, KT

JOHNSON, ST

JACOBSEN, DC

POATE, JM

GIBSON, JM

BOERMA, DO

机构：

[1] ROYAL MELBOURNE INST TECHNOL,MELBOURNE,VIC 3001,AUSTRALIA

[2] UNIV GRONINGEN,9718 CM GRONINGEN,NETHERLANDS

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 65卷 / 03期

关键词：

D O I：

10.1063/1.343044

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：1089 / 1098

页数：10

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