IMPLANTATION TEMPERATURE-DEPENDENCE OF ELECTRICAL ACTIVATION, SOLUBILITY, AND DIFFUSION OF IMPLANTED TE, CD, AND SN IN GAAS

被引：29

作者：

PEARTON, SJ

WILLIAMS, JS

SHORT, KT

JOHNSON, ST

JACOBSEN, DC

POATE, JM

GIBSON, JM

BOERMA, DO

机构：

[1] ROYAL MELBOURNE INST TECHNOL,MELBOURNE,VIC 3001,AUSTRALIA

[2] UNIV GRONINGEN,9718 CM GRONINGEN,NETHERLANDS

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 65卷 / 03期

关键词：

D O I：

10.1063/1.343044

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：1089 / 1098

页数：10

相关论文

共 27 条

[21] MECHANISMS OF AMORPHIZATION AND RECRYSTALLIZATION IN ION-IMPLANTED III-V COMPOUND SEMICONDUCTORS
SADANA, DK
[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1985, 7-8 (MAR) : 375 - 386
[22] THE ANNEALING MECHANISM OF SELENIUM IMPLANTED INTO GAAS
SEALY, BJ
BARRETT, NJ
BENSALEM, R
[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1986, 19 (11) : 2147 - 2155
[23] LOCAL-STRUCTURE OF S IMPURITIES IN IMPLANTED GAAS
SETTE, F
PEARTON, SJ
POATE, JM
ROWE, JE
[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1987, 19-20 : 408 - 412
[24] LOCAL-STRUCTURE OF S-IMPURITIES IN GAAS
SETTE, F
PEARTON, SJ
POATE, JM
ROWE, JE
[J]. PHYSICAL REVIEW LETTERS, 1986, 56 (24) : 2637 - 2640
[25] DOPING OF III-V COMPOUND SEMICONDUCTORS BY ION-IMPLANTATION
STEPHENS, KG
[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1983, 209 (MAY): : 589 - 614
[26] Williams J. S., 1982, Laser annealing of semiconductors, P383
[27] SELF-COMPENSATION OF DONORS IN HIGH-PURITY GAAS
WOLFE, CM
STILLMAN, GE
[J]. APPLIED PHYSICS LETTERS, 1975, 27 (10) : 564 - 567