MOSSBAUER SEARCH FOR THE DX-CENTER

被引：5

作者：

LANGOUCHE, G

机构：

来源：

HYPERFINE INTERACTIONS | 1989年 / 47-8卷 / 1-4期

关键词：

D O I：

10.1007/BF02351601

中图分类号：

O64 [物理化学（理论化学）、化学物理学]; O56 [分子物理学、原子物理学];

学科分类号：

070203 ; 070304 ; 081704 ; 1406 ;

摘要：

引用

页码：85 / 94

页数：10

共 26 条

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BOERMA, DO .

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[6] TRAPPING CHARACTERISTICS AND A DONOR-COMPLEX (DX) MODEL FOR THE PERSISTENT PHOTOCONDUCTIVITY TRAPPING CENTER IN TE-DOPED ALXGA1-XAS [J].

LANG, DV ;

LOGAN, RA ;

JAROS, M .

PHYSICAL REVIEW B, 1979, 19 (02) :1015-1030

[7] LARGE-LATTICE-RELAXATION MODEL FOR PERSISTENT PHOTOCONDUCTIVITY IN COMPOUND SEMICONDUCTORS [J].

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PHYSICAL REVIEW LETTERS, 1977, 39 (10) :635-639

[8]

LANG DV, 1986, DEEP CTR SEMICONDUCT, pCH7

[9]

LANGOUCHE G, 1989, MOSSBAUER SPECTROSCO, V3, pCH10

[10]

LANGOUCHE G, 1988, IN PRESS 15TH P INT

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