LOW-TEMPERATURE SURFACE PASSIVATION OF SILICON FOR SOLAR-CELLS

被引:278
作者
HEZEL, R
JAEGER, K
机构
[1] Univ Erlangen-Nuernberg, Germany
关键词
24;
D O I
10.1149/1.2096673
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
引用
收藏
页码:518 / 523
页数:6
相关论文
共 24 条
[1]  
ABOAF JA, 1967, J ELECTROCHEM SOC, V144, P9
[2]  
Blumenstock K., 1986, Insulating Films on Semiconductors. Proceedings of the International Conference INFOS 85, P221
[3]  
BLUMENSTOCK K, 1986, THESIS U ERLANGEN NU
[4]  
BLUMENSTOCK K, 1983, INSULATING FILMS SEM
[5]  
BURTE EP, 1984, THESIS U ERLANGEN NU
[6]   OPERATING LIMITS OF AL-ALLOYED HIGH-LOW JUNCTIONS FOR BSF SOLAR-CELLS [J].
DELALAMO, J ;
EGUREN, J ;
LUQUE, A .
SOLID-STATE ELECTRONICS, 1981, 24 (05) :415-420
[7]   SURFACE RECOMBINATION IN SEMICONDUCTORS [J].
FITZGERALD, DJ ;
GROVE, AS .
SURFACE SCIENCE, 1968, 9 (02) :347-+
[8]  
GREEN MA, 1985, 18TH IEEE PHOT SPEC, P39
[9]   ELECTRON-HOLE RECOMBINATION IN GERMANIUM [J].
HALL, RN .
PHYSICAL REVIEW, 1952, 87 (02) :387-387
[10]   INTERFACE STATES AND FIXED CHARGES IN MNOS STRUCTURES WITH APCVD AND PLASMA SILICON-NITRIDE [J].
HEZEL, R ;
BLUMENSTOCK, K ;
SCHORNER, R .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (07) :1679-1683