INTERFACE STATES AND FIXED CHARGES IN MNOS STRUCTURES WITH APCVD AND PLASMA SILICON-NITRIDE

被引：38

作者：

HEZEL, R

BLUMENSTOCK, K

SCHORNER, R

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1984年 / 131卷 / 07期

关键词：

D O I：

10.1149/1.2115936

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1679 / 1683

页数：5

共 25 条

[1] CRYSTALLOGRAPHIC SYMMETRY OF SURFACE STATE DENSITY IN THERMALLY OXIDIZED SILICON [J].

ARNOLD, E ;

LADELL, J ;

ABOWITZ, G .

APPLIED PHYSICS LETTERS, 1968, 13 (12) :413-+

[2]

BLUMENSTOCK K, 1983, INSULATING FILMS SEM

[3] PLASMA SI NITRIDE - A PROMISING DIELECTRIC TO ACHIEVE HIGH-QUALITY SILICON MIS-IL SOLAR-CELLS [J].

HEZEL, R ;

SCHORNER, R .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (04) :3076-3079

[4] MECHANICAL-STRESS AND ELECTRICAL-PROPERTIES OF MNOS DEVICES AS A FUNCTION OF NITRIDE DEPOSITION TEMPERATURE [J].

HEZEL, R ;

HEARN, EW .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (11) :1848-1854

[5] ELECTRON AND ION-BEAM EFFECTS IN AMORPHOUS SIO2 AND SI3N4 FILMS FOR ELECTRONIC DEVICES [J].

HEZEL, R .

RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1982, 65 (1-4) :101-106

[6] HIGH-TEMPERATURE ANNEALING OF MNOS DEVICES AND ITS EFFECT ON SI-NITRIDE STRESS, INTERFACE CHARGE-DENSITY AND MEMORY PROPERTIES [J].

HEZEL, R .

JOURNAL OF ELECTRONIC MATERIALS, 1979, 8 (04) :459-484

[7] ELECTRON-BEAM-INDUCED-CURRENT INVESTIGATIONS ON MOS AND MNOS DEVICES [J].

HEZEL, R .

SOLID-STATE ELECTRONICS, 1979, 22 (08) :735-&

[8] SILICON-NITRIDE FOR THE IMPROVEMENT OF SILICON INVERSION LAYER SOLAR-CELLS [J].

HEZEL, R .

SOLID-STATE ELECTRONICS, 1981, 24 (09) :863-868

[9]

HEZEL R, 1982, 16TH P IEEE PHOT SPE, P1237

[10]

HEZEL R, 1984, J APPL PHYS, V27, P5516

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