ELECTRON AND ION-BEAM EFFECTS IN AMORPHOUS SIO2 AND SI3N4 FILMS FOR ELECTRONIC DEVICES

[1] Hezel R., 1981, Third E.C. Photovoltaic Solar Energy Conference, P866

[2] ROOM-TEMPERATURE FORMATION OF SI-NITRIDE FILMS BY LOW-ENERGY NITROGEN ION-IMPLANTATION INTO SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (02) : 379 - 383

[3] ELECTRON-BEAM-INDUCED-CURRENT INVESTIGATIONS ON MOS AND MNOS DEVICES [J]. SOLID-STATE ELECTRONICS, 1979, 22 (08) : 735 - &

[4] SILICON-NITRIDE FOR THE IMPROVEMENT OF SILICON INVERSION LAYER SOLAR-CELLS [J]. SOLID-STATE ELECTRONICS, 1981, 24 (09) : 863 - 868

[5] AUGER ANALYSIS OF SIO2-SI INTERFACE [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (07) : 3028 - 3037

[6] RADIATION-INDUCED SURFACE STATES IN MOS DEVICES [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1975, 22 (06) : 2193 - 2196

[7] CORE AND VALENCE ELECTRON EXCITATIONS OF AMORPHOUS SILICON-OXIDE AND SILICON-NITRIDE STUDIED BY LOW-ENERGY ELECTRON LOSS SPECTROSCOPY [J]. THIN SOLID FILMS, 1979, 61 (02) : 217 - 228

[8] OXIDE FORMATION ON THE SILICON (111) SURFACE STUDIED BY AUGER-ELECTRON SPECTROSCOPY AND BY LOW-ENERGY ELECTRON LOSS SPECTROSCOPY [J]. THIN SOLID FILMS, 1979, 61 (02) : 197 - 202

[9] LIESKE N, 1980, I PHYS C SERIES, V50, P206

[10] RADIATION-INSENSITIVE SILICON OXYNITRIDE FILMS FOR USE IN SILICON DEVICES .2. [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1970, NS17 (06) : 11 - +

[1] Hezel R., 1981, Third E.C. Photovoltaic Solar Energy Conference, P866

[2] ROOM-TEMPERATURE FORMATION OF SI-NITRIDE FILMS BY LOW-ENERGY NITROGEN ION-IMPLANTATION INTO SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (02) : 379 - 383

[3] ELECTRON-BEAM-INDUCED-CURRENT INVESTIGATIONS ON MOS AND MNOS DEVICES [J]. SOLID-STATE ELECTRONICS, 1979, 22 (08) : 735 - &

[4] SILICON-NITRIDE FOR THE IMPROVEMENT OF SILICON INVERSION LAYER SOLAR-CELLS [J]. SOLID-STATE ELECTRONICS, 1981, 24 (09) : 863 - 868

[5] AUGER ANALYSIS OF SIO2-SI INTERFACE [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (07) : 3028 - 3037

[6] RADIATION-INDUCED SURFACE STATES IN MOS DEVICES [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1975, 22 (06) : 2193 - 2196

[7] CORE AND VALENCE ELECTRON EXCITATIONS OF AMORPHOUS SILICON-OXIDE AND SILICON-NITRIDE STUDIED BY LOW-ENERGY ELECTRON LOSS SPECTROSCOPY [J]. THIN SOLID FILMS, 1979, 61 (02) : 217 - 228

[8] OXIDE FORMATION ON THE SILICON (111) SURFACE STUDIED BY AUGER-ELECTRON SPECTROSCOPY AND BY LOW-ENERGY ELECTRON LOSS SPECTROSCOPY [J]. THIN SOLID FILMS, 1979, 61 (02) : 197 - 202

[9] LIESKE N, 1980, I PHYS C SERIES, V50, P206

[10] RADIATION-INSENSITIVE SILICON OXYNITRIDE FILMS FOR USE IN SILICON DEVICES .2. [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1970, NS17 (06) : 11 - +