LIMITATIONS TO THE OPEN CIRCUIT VOLTAGE OF AMORPHOUS-SILICON SOLAR-CELLS

被引：3

作者：

HACK, M ^{[1
]}

SHUR, M ^{[1
]}

机构：

[1] ENERGY CONVERS DEVICES INC,TROY,MI 48084

来源：

APPLIED PHYSICS LETTERS | 1986年 / 49卷 / 21期

关键词：

D O I：

10.1063/1.97345

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1432 / 1434

页数：3

共 10 条

[1] ENHANCEMENT OF OPEN CIRCUIT VOLTAGE IN HIGH-EFFICIENCY AMORPHOUS-SILICON ALLOY SOLAR-CELLS [J].

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NATH, P ;

HACK, M .

APPLIED PHYSICS LETTERS, 1986, 49 (04) :218-219

[2] PHYSICS OF AMORPHOUS-SILICON ALLOY P-I-N SOLAR-CELLS [J].

HACK, M ;

SHUR, M .

JOURNAL OF APPLIED PHYSICS, 1985, 58 (02) :997-1020

[3] THE ROLE OF BORON PROFILING IN ENHANCING THE PERFORMANCE OF AMORPHOUS SILICON-BASED ALLOY P-I-N SOLAR-CELLS [J].

HACK, M ;

SHUR, MS .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (05) :539-541

[4] THEORETICAL-STUDIES OF THE ELECTRIC-FIELD DISTRIBUTION AND OPEN-CIRCUIT VOLTAGE OF AMORPHOUS SILICON-BASED ALLOY P-I-N SOLAR-CELLS [J].

HACK, M ;

SHUR, MS .

JOURNAL OF APPLIED PHYSICS, 1984, 55 (12) :4413-4417

[5] SCHOTTKY BARRIERS ON PHOSPHORUS-DOPED HYDROGENATED AMORPHOUS-SILICON - THE EFFECTS OF TUNNELING [J].

JACKSON, WB ;

NEMANICH, RJ ;

THOMPSON, MJ ;

WACKER, B .

PHYSICAL REVIEW B, 1986, 33 (10) :6936-6945

[6] EFFECTS OF BORON PROFILES ON THE OPEN CIRCUIT VOLTAGE OF P-I-N AND N-I-P AMORPHOUS-SILICON SOLAR-CELLS [J].

JEFFREY, FR ;

VERNSTROM, GD .

APPLIED PHYSICS LETTERS, 1986, 48 (22) :1538-1539

[7]

MCMAHON TJ, 1985, MATER RES SOC SUMP P, V49, P287

[8]

MULLER G, 1982, 16TH P IEEE PHOT SPE, P1129

[9] AMORPHOUS-SILICON SOLAR-CELLS [J].

OVSHINSKY, SR .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (04) :835-839

[10]

OVSHINSKY SR, 1986, SOC PHOTO OPT INSTRU, V617, P1

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