SCHOTTKY BARRIERS ON PHOSPHORUS-DOPED HYDROGENATED AMORPHOUS-SILICON - THE EFFECTS OF TUNNELING

被引：30

作者：

JACKSON, WB

NEMANICH, RJ

THOMPSON, MJ

WACKER, B

机构：

来源：

PHYSICAL REVIEW B | 1986年 / 33卷 / 10期

关键词：

D O I：

10.1103/PhysRevB.33.6936

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：6936 / 6945

页数：10

共 23 条

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[8]

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