TI-DOPED P-TYPE LAYER OF ZNSE

被引：6

作者：

NAKAU, T

FUJIWARA, T

YOSHITAKE, S

TAKENOSHITA, H

ITOH, N

OKUDA, M

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1982年 / 59卷 / 1-2期

关键词：

D O I：

10.1016/0022-0248(82)90324-4

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：196 / 200

页数：5

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[2]

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[6] THEORY OF ISOTHERMAL CURRENTS AND DIRECT DETERMINATION OF TRAP PARAMETERS IN SEMICONDUCTORS AND INSULATORS CONTAINING ARBITRARY TRAP DISTRIBUTIONS [J].

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TAM, MC .

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[7] A NEW SEMICONDUCTOR PHOTOCELL USING LATERAL PHOTOEFFECT [J].

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