FORMATION OF LOW DEFECT DENSITY SIOX FILMS FOR JOSEPHSON INTEGRATED-CIRCUITS

被引：21

作者：

SHIBAYAMA, H

HASUO, S

YAMAOKA, T

机构：

来源：

APPLIED PHYSICS LETTERS | 1985年 / 47卷 / 04期

关键词：

D O I：

10.1063/1.96134

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：429 / 430

页数：2

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共 5 条

[1] CREMER E, 1958, Z ELEKTROCHEM, V62, P939
[2] FABRICATION PROCESS FOR JOSEPHSON INTEGRATED-CIRCUITS
GREINER, JH
KIRCHER, CJ
KLEPNER, SP
LAHIRI, SK
WARNECKE, AJ
BASAVAIAH, S
YEN, ET
BAKER, JM
BROSIOUS, PR
HUANG, HCW
MURAKAMI, M
AMES, I
[J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1980, 24 (02) : 195 - 205
[3] STRESS ANISOTROPY IN SILICON OXIDE FILMS
PRIEST, J
CASWELL, HL
BUDO, Y
[J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (02) : 347 - &
[4] SILICON VALENCE IN SIO FILMS STUDIED BY X-RAY EMISSION
WHITE, EW
ROY, R
[J]. SOLID STATE COMMUNICATIONS, 1964, 2 (06) : 151 - 152
[5] PROPERTIES OF EVAPORATED THIN FILMS OF SIO
YORK, DB
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (04) : 271 - 275