BETE ZNSE GRADED BAND-GAP OHMIC CONTACTS TO P-ZNSE

BeTe is not a very well known wide-band semiconductor. Due to the close lattice match to GaAs and ZnSe and p-type as-grown character, BeZn1-xTexSe1-x graded band-gap layers appear an ideal candidate for ohmic contact to p-type ZnSe based semiconductors. These contacts allow for an implementation of epitaxial structures of II-VI compound diode lasers entirely lattice matched to the GaAs substrate. The numerical calculations predict contact resistivity of BexZn1-xTexSe1-x, graded gap contacts lower than rho(c) = 10(-4) OMEGA cm2 at acceptor doping level 1 x 10(18) cm-3, which corresponds to a voltage drop across the contact layer of less than 0.1 V during lasing operation.