SIGNIFICANCE OF BAND STRUCTURE IN DETERMINING RADIATIVE RECOMBINATION AND LASER ACTION IN THE LEAD SALT SEMICONDUCTORS

被引：12

作者：

JUNGA, FA

CUFF, KF

BLAKEMORE, JS

WASHWELL, ER

机构：

来源：

PHYSICS LETTERS | 1964年 / 13卷 / 02期

关键词：

D O I：

10.1016/0031-9163(64)90673-0

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：103 / 105

页数：3

共 13 条

[1]

BENOIT C, 1963, SOLID STATE COMMUN, V1, P148

[2]

BLAKEMORE JS, 1962, SEMICONDUCTOR STATIS, P214

[3] PBTE DIODE LASER ( LAMBDA 6.5 MU 12 DEGREES K E ) [J].

BUTLER, JF ;

REDIKER, RH ;

CALAWA, AR ;

HARMAN, TC ;

PHELAN, RJ ;

STRAUSS, AJ .

APPLIED PHYSICS LETTERS, 1964, 5 (04) :75-&

[4]

Cuff K. F., 1962, P INT C PHYS SEMICON, P316

[5]

CUFF KF, 1964, P INT C SEMICONDUCTO

[6] COHERENT LIGHT EMISSION FROM GAAS JUNCTIONS [J].

HALL, RN ;

CARLSON, RO ;

SOLTYS, TJ ;

FENNER, GE ;

KINGSLEY, JD .

PHYSICAL REVIEW LETTERS, 1962, 9 (09) :366-&

[7] THRESHOLD RELATIONS AND DIFFRACTION LOSS FOR INJECTION LASERS [J].

LASHER, GJ .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1963, 7 (01) :58-61

[8]

MENGAILIS I, 1963, APPL PHYS LETT, V2, P176

[9] STIMULATED EMISSION OF RADIATION FROM GAAS P-N JUNCTIONS [J].

NATHAN, MI ;

DUMKE, WP ;

BURNS, G ;

DILL, FH ;

LASHER, G .

APPLIED PHYSICS LETTERS, 1962, 1 (03) :62-64

[10] INFRARED INSB LASER DIODE IN HIGH MAGNETIC FIELDS [J].

PHELAN, RJ ;

CALAWA, AR ;

REDIKER, RH ;

KEYES, RJ ;

LAX, B .

APPLIED PHYSICS LETTERS, 1963, 3 (09) :143-145

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